IRFR430BTF
Manufacturer Number: IRFR430BTF
Manufacturer: onsemi
Description / Features: MOSFET 500V Single
The IRFR430BTF is a high-performance N-channel MOSFET designed for efficient power switching. Specifically, it offers low on-resistance and fast switching capabilities, making it suitable for high-frequency applications.
In addition, this MOSFET features a robust thermal performance, which ensures reliability even under heavy loads. Furthermore, its compact TO-220 package allows easy integration into various electronic designs.
Due to these characteristics, the IRFR430BTF is widely used in power supplies, motor drivers, and industrial automation circuits. Consequently, engineers can achieve both high efficiency and stability in their designs.
Overall, the IRFR430BTF combines durability, performance, and ease of use, making it an ideal choice for modern electronic applications.
IRFR430BTF N-Channel MOSFET – Product Information
Specifications of IRFR430BTF
| Attribute | Value |
|---|---|
| Manufacturer | onsemi |
| Brand | onsemi |
| Product Type | N-Channel Enhancement Mode MOSFET |
| Technology | Silicon (Si) |
| Channel Configuration | Single |
| Transistor Polarity | N-Channel |
| Channel Mode | Enhancement |
| Subcategory | Transistors |
| RoHS Compliance | No |
| Part Number Alias | IRFR430BTF |
Package & Mounting
| Attribute | Value |
|---|---|
| Mounting Style | SMD / SMT |
| Package / Case | DPAK-3 (TO-252-3) |
| Package Type / Factory Packaging | Reel |
Electrical Specifications – IRFR430BTF
| Parameter | Value |
|---|---|
| Drain-Source Breakdown Voltage (Vds) | 500 V |
| Continuous Drain Current (Id) | 3.5 A |
| Drain-Source On-Resistance (Rds(on)) | 1.5 Ω |
| Gate-Source Voltage (Vgs) | –30 V to +30 V |
| Minimum Operating Temperature | –55 °C |
| Maximum Operating Temperature | +150 °C |
| Power Dissipation (Pd) | 2.5 W |
Switching Characteristics
| Parameter | Value |
|---|---|
| Rise Time (tr) | 45 ns |
| Fall Time (tf) | 50 ns |
| Typical Turn-On Delay Time (td(on)) | 15 ns |
| Typical Turn-Off Delay Time (td(off)) | 85 ns |
Additional Information
| Attribute | Value |
|---|---|
| Trademark / Technology | onsemi |
| Configuration | Single |
| Product Type Category | MOSFETs |
| Country of Origin | Not Available |
| Assembly Country | Not Available |
| Diffusion Country | Not Available |
| Crystal Type | 1 N-Channel |
| Unit Weight | 330 mg |
FAQ
Q1: What is this device?
A: It is an N-channel power MOSFET featuring low on-resistance and high current handling capability, suitable for switching power supplies, motor drivers, and high-efficiency power management circuits.
Q2: What are the key electrical specifications?
A: Typical parameters include:
- Drain-Source Voltage (V_DS): 55V
- Continuous Drain Current (I_D): 10A
- On-Resistance (R_DS(on)): ~0.04Ω
- Gate Charge (Q_g): moderate, suitable for fast switching applications
Q3: What package type does it use?
A: The device comes in a TO-220 package, which facilitates heat dissipation and easy mounting on PCBs or heatsinks.
Q4: How does it perform in high-frequency switching applications?
A: With low gate charge and fast switching characteristics, it is ideal for PWM control, DC-DC converters, and motor driver circuits.
Q5: What precautions should be taken when using it?
A: Key considerations include proper thermal management, recommended gate drive voltage (10V), and avoiding exceeding maximum rated voltage and current to prevent device damage.
Disclaimer: Any content provided for “learning or technical study purposes” is for reference and informational use only and should not be considered as official product documentation, specifications, or endorsements.
