H5CGD4MGBDX021N SK hynix Mobile DRAM Overview
H5CGD4MGBDX021N
is a SK hynix mobile DRAM memory IC in a BGA (Ball Grid Array) package.
It features a compact black molded body with the part number marked on the top surface,
and a solder ball array on the bottom for surface mounting onto a PCB.
It is used as system working memory in mobile and embedded electronic devices.
Key Specifications
- Manufacturer: SK hynix
- Product Type: Mobile DRAM (LPDDR family category)
- Package Type: BGA (Ball Grid Array)
- Application Class: Mobile and embedded system memory
- Architecture: Low-power synchronous DRAM design
This part number is typically used in system-level integration and may exist in multiple configuration variants depending on platform requirements.
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Description
H5CGD4MGBDX021N SK hynix Mobile DRAM Overview
Overview of H5CGD4MGBDX021N
The H5CGD4MGBDX021N is a mobile DRAM memory IC manufactured by SK hynix, designed for modern mobile and embedded computing systems. It belongs to SK hynix’s low-power DRAM product family and is widely used in high-performance portable electronic devices such as smartphones, tablets, and compact computing platforms.
Performance & Features
This device is engineered to provide stable memory performance, low power consumption, and high data efficiency, making it suitable for energy-sensitive and space-constrained applications.
Usage
As a production-level part number, it is commonly adopted in OEM system designs where memory integration is optimized at the board level.
Key Features
- Manufactured by SK hynix, a leading global semiconductor company
- Mobile DRAM architecture optimized for low power operation
- High-speed data processing capability for mobile workloads
- Compact BGA packaging suitable for dense PCB layouts
- Designed for stable long-term system performance
- Suitable for high-efficiency embedded memory applications
Applications of H5CGD4MGBDX021N
The H5CGD4MGBDX021N is commonly used in:
- Smartphones and mobile devices
- Tablets and portable computing systems
- Embedded industrial and IoT platforms
- Consumer electronics requiring fast memory access
- Compact electronic systems with power efficiency requirements
Why Choose This Memory Solution
- Reliable SK hynix semiconductor manufacturing quality
- Optimized for mobile performance and low power usage
- Suitable for high-density system integration
- Widely adopted in global OEM device designs
- Strong compatibility with modern mobile computing platforms
FAQ:H5CGD4MGBDX021N
Q1: What type of memory is H5CGD4MGBDX021N?
A: It is a mobile DRAM (volatile memory) used for system-level operation. It temporarily stores data required by the processor during active operation and does not retain data after power loss.
Q2: Is full datasheet publicly available?
A: No, detailed specifications such as density, speed grade, and internal architecture are generally not publicly released. They are typically available only through OEM design documentation or authorized SK hynix channels.
Q3: Can this part be used in any system?
A: No. Compatibility depends on the memory controller, chipset design, and board-level architecture. This type of DRAM must match the hardware platform specifications exactly.
Q4: Does this part belong to the LPDDR family?
A: It belongs to SK hynix’s mobile DRAM product line, which is generally associated with LPDDR-class low-power memory architectures, but the exact generation must be confirmed through system design documentation.
Q5: Is this suitable for industrial applications?
A: Yes, it can be used in industrial or embedded systems, provided that the electrical, thermal, and interface requirements are fully matched with the system design.
Q6: What is the main function of this DRAM chip?
A: The chip serves as temporary working memory for the processor, enabling fast data access for applications, system processes, and multitasking operations.
Q7: Does the suffix (such as DX021N) affect performance?
A: The suffix typically refers to internal production codes, packaging, or revision tracking, and does not directly define performance characteristics.
Q8: Is this memory non-volatile like NAND Flash?
A: No. This is a volatile memory (DRAM), meaning all stored data is lost when power is removed. NAND Flash is used for permanent storage.
Q9: Can this component be replaced with other DRAM chips?
A: Replacement is only possible if the alternative chip matches the same architecture, interface, density, and electrical specifications required by the system design.
Q10: What industries commonly use this type of memory?
A: It is widely used in:
- Mobile device manufacturing
- Consumer electronics
- Embedded computing systems
- IoT and smart hardware platforms
*Specifications are based on publicly available sources and industry references. Final specifications should be confirmed with the official manufacturer or authorized documentation.
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