Showing 1–36 of 73 results
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H58GD6AK8BX091N
is a mobile DRAM memory chip
manufactured by SK hynix
based on LPDDR5X technology
used in smartphones and tablets
providing high-speed, low-power system memory support
Key Specifications
Product Type: LPDDR5X DRAM
Manufacturer: SK hynix
Memory Type: Mobile DRAM (System Memory)
Package Type: BGA (Ball Grid Array)
Application Level: High-performance mobile memory solution
| MT29F16G08CBABA |
| MT29F32G08CBABA |
| MT29F128G08CBABA |
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| MT29F1G01ABBFDWB-IT:F |
| MT29F2G08ABAFAWP:F |
H5AN8G8NCJR-XNC
8Gb DDR4 SDRAM Memory IC
SK hynix
Main memory component
Computer & Embedded systems
| MT29F16G08CBABA |
| MT29F32G08CBABA |
| MT29F128G08CBABA |
| MT29F256G08CBABA |
| MT29F1G01ABBFDWB-IT:F |
| MT29F2G08ABAFAWP:F |
| Item | Description |
| Manufacturer | SK hynix |
| Product Type | DDR5 DRAM IC |
| Density | 16Gb |
| Organization | 2G x 8 |
| Memory Type | DDR5 SDRAM |
| Package | FBGA |
| Voltage | DDR5 standard operating voltage |
| MT29F4G08ABAFAH4-IT:F |
| MT29F64G08CBABAWP-M:B TR |
| MT29F8G08ABACAH4-IT:C TR |
| MT29F2G01ABAGDWB-IT:G |
| MT29F8G08ABACAH4-IT:C |
| MT29F8G08ABACAH4-ITS:C |
H5CGD4MGBDX021N
is a SK hynix mobile DRAM memory IC in a BGA (Ball Grid Array) package.
It features a compact black molded body with the part number marked on the top surface,
and a solder ball array on the bottom for surface mounting onto a PCB.
It is used as system working memory in mobile and embedded electronic devices.
This part number is typically used in system-level integration and may exist in multiple configuration variants depending on platform requirements.
H5TC4G63EFR-RDA is a DDR3L SDRAM
(low-power synchronous dynamic random-access memory) integrated circuit.
It is a type of memory chip used as system RAM.
It typically serves as working data storage for electronic devices during operation.
H5TC4G83EFR-PBA Key Attributes
Product Type: DDR3 SDRAM (Synchronous Dynamic Random-Access Memory)
Manufacturer: SK hynix
Package Type: FBGA (Ball Grid Array Package)
Product Category: DRAM Memory IC
Application Type: Main memory / Embedded memory / Industrial and consumer electronic systems
Technical Features (Based on DDR3 Standard)
Memory Standard: DDR3 SDRAM architecture
Operating Voltage: 1.5V (standard DDR3 voltage)
Interface Type: High-speed parallel DDR3 interface
Data Transfer Mode: Double Data Rate (DDR)
System Compatibility: Compatible with DDR3 memory controller platforms (depends on system design)
Memory Type HBM high bandwidth memory
Technology DRAM
Structure Stacked memory multi die design
Bandwidth Level High bandwidth memory class
Installation Integrated with processor via advanced packaging
Manufacturer SK hynix
K4A4G165WG-BCWE is a DDR4 memory device designed for stable and efficient data processing performance. It provides a balance of speed and low power consumption, making it suitable for modern computing and embedded system applications.
This component is widely used in system designs that require reliable memory operation and consistent performance under standard DDR4 operating conditions.
Brand Name: SAMSUNG (Samsung Semiconductor)
Part Number: K4B2G1646F-BYMA
Product Code: C500274
Package Type: FBGA-96
Packaging Method: Tray
Product Weight: 0.18 g
| K9F1G08U0D |
| K9F2G08U0C |
| K9F4G08U0E |
| K9G8G08U0E |
| TC58NVG0S3HTA00 |
| W25Q32JVSSIQ |
| W25Q64JVSSIQ |
| W25Q128JVSIQ |
| W25Q256JVFIQ |
| MT41K512M16HA-125 IT:A |
| AS4C512M16D3LC-12BIN |
| AS4C512M16D3LB-12BINTR |
| K4B2G1646F-BYMA |
Samsung K4F6E304HB-MGCH
Samsung K4F-series mobile low-power DRAM
FBGA package
Used in smartphones, tablets, and embedded systems
Specifications must be confirmed via official datasheet
| MT29F16G08CBABA |
| MT29F32G08CBABA |
| MT29F128G08CBABA |
| MT29F256G08CBABA |
| MT29F1G01ABBFDWB-IT:F |
| MT29F2G08ABAFAWP:F |
| Item | Specification |
| Manufacturer | Samsung |
| Product Type | DDR5 DRAM IC |
| Density | 16Gb |
| Organization | 2G x 8 |
| Speed Grade | DDR5-4800 |
| Voltage | ~1.1V |
| Package | FBGA (approx. 82-ball, per official listing) |
| Operating Temperature | 0°C to 85°C |
| Product Status | EOL (End of Life) |
| MT29F16G08CBABA |
| MT29F32G08CBABA |
| MT29F128G08CBABA |
| MT29F256G08CBABA |
| MT29F1G01ABBFDWB-IT:F |
| MT29F2G08ABAFAWP:F |
| Parameter | Description |
| Memory Density | 16 Gb |
| Organization | 2G x 8 |
| Interface | DDR5 SDRAM |
| Data Rate | Up to 5600 Mbps |
| Supply Voltage | 1.1V |
| Package Type | 82-ball FBGA |
| Operating Temperature | 0°C to 85°C |
| Type | High-speed DRAM chip |
| MT29F16G08CBABA |
| MT29F32G08CBABA |
| MT29F128G08CBABA |
| MT29F256G08CBABA |
| MT29F1G01ABBFDWB-IT:F |
| MT29F2G08ABAFAWP:F |
K4RAH086VP-E000 is a DRAM memory IC from Samsung Electronics within the DDR5 SDRAM product family.
This description is based on general DDR5 SDRAM classification and publicly available industry information.
K4T1G084QJ-BCE7
is a 1Gb DDR2 SDRAM memory chip
manufactured by Samsung,
designed to provide stable and high-speed data storage
and operational support for electronic systems.
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Manufacturer: Samsung Electronics / Samsung Semiconductor
Product Type: eMMC Embedded Storage Chip
Standard: eMMC 5.1 Family (varies by variant)
Capacity: 16GB / 32GB / 64GB (varies by configuration)
Package: FBGA (Ball Grid Array)
Ball Count: 153-ball (typical configuration, may vary by revision)
Function: Onboard embedded data storage
Architecture: NAND Flash + Controller integrated
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MT29F16G08CBABA is a high-reliability 16Gb NAND Flash Memory IC designed for industrial and embedded applications.
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