Description

K4RAH086VB-BCQK DDR5 DRAM Memory IC

Product Overview

K4RAH086VB-BCQK is a DDR5 SDRAM memory IC manufactured by Samsung Electronics.
It is a 16Gb (2G x 8) DRAM chip designed for integration into memory modules used in modern computing systems.

Based on DDR5 architecture, this device supports higher bandwidth and improved power efficiency compared to previous DRAM generations, making it suitable for data-intensive applications.

Key Features of K4RAH086VB-BCQK

• DDR5 SDRAM architecture
• 16Gb density (2G x 8 organization)
• Supports data rates up to 4800 Mbps (DDR5-4800)
• Low operating voltage (~1.1V)
• FBGA package (surface-mount, bottom solder balls)
• Designed for high-performance memory module integration

Applications of K4RAH086VB-BCQK

This DDR5 DRAM IC is typically used in:

• Server memory modules (DIMM)
• Desktop and workstation memory systems
• Data center infrastructure
• High-performance computing (HPC)
• Embedded computing platforms

Product Positioning of K4RAH086VB-BCQK

K4RAH086VB-BCQK is a chip-level DRAM component, not a finished memory module.

It is used as a core building block in DDR5 memory module design and manufacturing.

Technical Advantages (General Industry Description)

• Higher bandwidth enabled by DDR5 architecture
• Improved power efficiency compared to DDR4
• Enhanced reliability features such as on-die ECC (DDR5 standard concept)
• Scalable for high-density memory systems
• Suitable for modern data-intensive workloads

FAQ:K4RAH086VB-BCQK

Q1: Is this a finished RAM module?

No. It is a DRAM IC used to manufacture memory modules.
This means it is a chip-level component that requires integration onto a memory module PCB before it can be used in any system.

Q2: Can it be used independently?

No. It must be integrated into a memory module.
DRAM ICs are not standalone storage devices and require a memory controller and supporting circuitry to operate within a system.

Q3: What is its main function?

It provides high-speed volatile memory for system operation.
It temporarily stores active data and instructions that are being processed by the CPU, enabling fast system performance and responsiveness.

Q4: Does it store data permanently?

No. DRAM is a volatile memory type, meaning all stored data is lost when power is removed.
It is designed for temporary working memory rather than long-term data storage.

Q5: What does 16Gb (2G x 8) mean?

It refers to memory density and internal organization.
16Gb indicates the total storage capacity of the chip, while 2G x 8 describes how the memory is internally structured in terms of data width and banks.

Q6: Is it compatible with DDR4 systems?

No. DDR5 is not backward compatible with DDR4 due to differences in architecture, signaling, and physical interface design.
Each generation requires a corresponding platform and memory controller support.

Q7: What package does it use?

It uses an FBGA (Fine Ball Grid Array) package with bottom-mounted solder balls.
This surface-mount design allows high-density interconnection and is commonly used in modern DRAM integration.

Q8: What is the product lifecycle status?

This model is listed as End-of-Life (EOL).
EOL status indicates that the product is no longer in active production, although it may still be available through distribution channels depending on market availability.

K4RAH086VB-BCQK is a DDR5 SDRAM memory IC from Samsung Electronics with 16Gb density, designed for integration into memory modules.

It is used as a core component in the design of high-speed memory solutions for modern computing systems, supporting applications that require efficient data processing and stable system performance.

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