NT6AN256M16AV-J2

NT6AN256M16AV-J2
Nanya DDR4 SDRAM
DDR4 memory IC
4Gb DRAM chip
x16 DRAM memory
embedded memory chip
industrial DRAM
high speed SDRAM
volatile memory IC
FBGA DDR4 chip

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Description

NT6AN256M16AV J2 DDR4 SDRAM Memory IC

NT6AN256M16AV-J2 Product Overview

NT6AN256M16AV-J2 is a DDR4 SDRAM memory integrated circuit from Nanya Technology, designed for high-speed, low-power volatile memory applications in embedded systems, networking devices, industrial equipment, and computing platforms.

This device belongs to the DDR4 SDRAM family and provides efficient data bandwidth, stable performance, and improved power management compared to previous DDR generations. It is commonly used in systems requiring reliable temporary data storage and fast access speeds.

The NT6AN256M16AV series is widely adopted in compact memory subsystem designs where space efficiency and signal integrity are critical.


NT6AN256M16AV-J2 Key Features

  • DDR4 SDRAM architecture
  • High-speed synchronous dynamic random-access memory
  • Low operating voltage (DDR4 standard class, typically 1.2V)
  • High bandwidth data transfer capability
  • Designed for embedded and industrial applications
  • x16 data organization (typical for this memory family)
  • FBGA package for compact PCB design
  • Optimized for power efficiency and signal stability

Technical Overview

  • Memory Type: DDR4 SDRAM
  • Manufacturer: Nanya Technology
  • Data Width: x16
  • Density: Typically 4Gb class (family dependent)
  • Voltage: DDR4 standard class (low voltage operation)
  • Interface: Synchronous DRAM interface
  • Package Type: FBGA (fine-pitch ball grid array)
  • Operating Mode: High-speed burst access architecture

Applications

This DDR4 memory IC is commonly used in:

  • Networking equipment (routers, switches, gateways)
  • Industrial automation systems
  • Embedded computing platforms
  • Telecommunications hardware
  • Consumer electronics requiring DRAM buffering
  • Storage controllers and system cache designs
  • IoT edge devices and smart modules

NT6AN256M16AV-J2 Functional Advantages

The NT6AN256M16AV-J2 offers several advantages for system designers:

  • High data throughput for real-time processing
  • Reduced power consumption compared to DDR3 generation
  • Stable performance under industrial operating conditions
  • Compact footprint suitable for high-density PCB layouts
  • Improved system efficiency through faster memory access cycles

FAQ


What is it used for?

It is used as DDR4 volatile memory in embedded systems, networking devices, and industrial electronics that require fast temporary data storage.

Is it a NAND Flash or DRAM?

It is a DRAM (DDR4 SDRAM), not flash memory. Data is lost when power is removed.

What type of memory architecture does it use?

It uses DDR4 synchronous dynamic random-access memory architecture with burst data transfer capability.

Is this memory suitable for industrial applications?

Yes, DDR4 SDRAM devices from Nanya are commonly used in industrial and embedded systems requiring reliability and performance.

What package type does it use?

It typically uses an FBGA package designed for compact and high-density PCB integration.

Does it retain data without power?

No. As a DRAM device, it is volatile memory and requires continuous power to retain data.

What is the benefit of x16 configuration?

x16 configuration improves memory efficiency and is commonly used in embedded and networking designs for balanced performance and cost.

Can it replace DDR3 memory directly?

No. It requires DDR4-compatible memory controller and different electrical interface.

Learn More
To learn more about our integrated circuits, please visit the ICs page.
For detailed information on memory products, please check our Memory ICs page.
DDR, DDR2, DDR3, DDR4, DDR5, DDR6: Features, Applications

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