• Part Number: AS4C512M16D3LB-12
• Memory Type: DDR3L SDRAM
• Capacity: 8Gb (512M x 16)
• Voltage: 1.283V – 1.45V
• Speed: 800MHz
• Package: 96-Ball FBGA
• Organization: 512M x 16
• Operating Temperature: -40°C to +95°C
• Mounting Type: SMD / SMT
• Maximum Supply Current: 122 mA
• Factory Packing: Reel, 2000 units

• Memory Type: DDR3L SDRAM
• Capacity: 8Gb (512M x 16)
• Voltage: 1.35V (typical)
• Speed: 800MHz
• Package: 96-Ball FBGA
• Operating Temperature: Industrial Grade
• Part Number: MT41K512M16HA-125IT:A
• Interface: High-speed DDR3 architecture

• Memory Type: NAND Flash
• Density: 32Gb
• Interface: Parallel
• Voltage: 3.3V (typical)
• Operating Temperature: Industrial grade
• Package: TSOP / FBGA

• Price available on request
• Stock status based on inquiry
• Technical support provided
• Fast response within 24 hours

GD25Q128ESIGR
GD25Q128
SPI NOR Flash
128Mbit Flash Memory
Serial Flash IC
Embedded Memory Chip
Firmware Storage IC
GigaDevice Flash

SK hynix NAND Flash
embedded flash memory
parallel NAND chip
industrial memory device
non-volatile storage

H25G9TCXXCX702A is a NAND Flash memory device designed for embedded systems firmware storage and industrial applications requiring reliable non-volatile data storage

Manufacturer: SK hynix
Type: eMMC Flash Memory
Interface: eMMC
Package: BGA
Memory Type: NAND
Controller: Integrated
Application: Embedded Systems
Function: Storage for firmware and system data

eMMC flash memory
embedded storage solution
non volatile memory eMMC
industrial flash storage
IoT memory chip
embedded NAND controller

• Memory Type: DDR4 SDRAM
• Density: 8Gb
• Interface: x16 / x8 configuration (depends on module design)
• Operating Voltage: 1.2V
• Package Type: FBGA (Fine Ball Grid Array)
• Temperature Range: Industrial / Commercial grade options (depending on variant)
• Manufacturer: SK hynix

H5AN8G8NCJR-XNC
8Gb DDR4 SDRAM Memory IC
SK hynix
Main memory component
Computer & Embedded systems

H5CGD4MGBDX021N
is a SK hynix mobile DRAM memory IC in a BGA (Ball Grid Array) package.
It features a compact black molded body with the part number marked on the top surface,
and a solder ball array on the bottom for surface mounting onto a PCB.
It is used as system working memory in mobile and embedded electronic devices.

Key Specifications

• Manufacturer: SK hynix
• Product Type: Mobile DRAM (LPDDR family category)
• Package Type: BGA (Ball Grid Array)
• Application Class: Mobile and embedded system memory
• Architecture: Low-power synchronous DRAM design

This part number is typically used in system-level integration and may exist in multiple configuration variants depending on platform requirements.

Key Specifications of H5VR32ESA4H N0C

Memory Type HBM high bandwidth memory
Technology DRAM
Structure Stacked memory multi die design
Bandwidth Level High bandwidth memory class
Installation Integrated with processor via advanced packaging
Manufacturer SK hynix

• Product Type: DDR4 SDRAM (DRAM)
• Density: 4Gb
• Data Width: x16
• Operating Voltage: 1.2V
• Package Type: FBGA
• Manufacturer: Samsung Electronics

K4A4G165WG-BCWE is a DDR4 memory device designed for stable and efficient data processing performance. It provides a balance of speed and low power consumption, making it suitable for modern computing and embedded system applications.

This component is widely used in system designs that require reliable memory operation and consistent performance under standard DDR4 operating conditions.

Brand Name: SAMSUNG (Samsung Semiconductor)
Part Number: K4B2G1646F-BYMA
Product Code: C500274
Package Type: FBGA-96
Packaging Method: Tray
Product Weight: 0.18 g

• Brand: Samsung Semiconductor
• Part Number: K4B4G1646E-BYMA
• Memory Type: DDR3 SDRAM
• Capacity: 4Gb
• Package: FBGA-96 (7.5 × 13.3 mm)
• Packaging: Tray
• Product Code: C500275
• Weight: 0.86 g
• Mounting Type: SMD / SMT
• Operating Characteristics: High stability and low power consumption
  

  MT41K512M16HA-125 IT:A

  AS4C512M16D3LC-12BIN

  AS4C512M16D3LB-12BINTR

  K4B2G1646F-BYMA

K4RAH086VP-E000 is a DRAM memory IC from Samsung Electronics within the DDR5 SDRAM product family.

• Type: DRAM memory IC
• Standard: DDR5 SDRAM
• Manufacturer: Samsung Electronics
• Function: System working memory (not non-volatile storage)
• Applications: Servers, data centers, AI computing, and high-performance computing systems

This description is based on general DDR5 SDRAM classification and publicly available industry information.

K4T1G084QJ-BCE7
is a 1Gb DDR2 SDRAM memory chip
manufactured by Samsung,
designed to provide stable and high-speed data storage
and operational support for electronic systems.

Key Specifications

• Product Type: DDR2 SDRAM (DRAM)
• Density: 1Gb
• Data Organization: x8
• Operating Voltage: 1.8V
• Package Type: FBGA
• Interface: Parallel synchronous interface
• Standard: JEDEC DDR2 compliant

• 4Gb Capacity
• Parallel NAND Interface
• 3.3V Operation
• Industrial Temperature Range

• Memory Type: NAND Flash
• Capacity: 4Gb
• Interface: Parallel NAND
• Voltage: 3.3V
• Grade: Industrial

• Product Type: eMMC Flash Memory
• Manufacturer: Samsung
• Capacity: 4GB
• Memory Type: NAND Flash
• Interface: eMMC standard interface
• Package Type: BGA (Ball Grid Array)
• Function: Integrated storage and controller

• Small square or near-square form factor
• Flat black surface with printed part markings
• Solder ball array on the bottom side
• Designed for direct PCB mounting

Samsung eMMC 8GB
eMMC flash memory
embedded storage solution
managed NAND flash
BGA memory chip
industrial flash memory
IoT storage chip